As nanomanufacturing technology has been widely used in semiconductor device fabrication, numerical simulation plays a more and more important role in design of new nanoscale devices.
In this talk, I will introduce a platform we developed based on numerical solution of the multi-subband equation which is a quantum-classical hybrid model. The model describes the subbands produced by the quantum confinement in one direction by Schroedinger-Poisson system and the carrier transport in the channel direction by the Boltzmann equation. The platform is suitable to study not only IV semiconductors such as silicon semiconductors but also III-V compound semiconductors. The influence of various scattering mechanisms and crystal orientations are studied on the platform.
In addition, a method for calibrating the drift-diffusion (DD) model is also proposed so that the quasi-ballistic transport phenomenon can be accurately described by the modified DD model.